NE23383B fet equivalent, super low noise amplifier n-channel hj fet.
* SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz
* HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz
* GATE LENGTH = LG = 0.3 µm
* GATE WIDTH = W.
NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
1.0 ± 0.1 1.45 M.
The NE23383B is a heterojunction FET that utilizes the heterojunction to create high mobility electrons. The device features mushroom shaped gate for decreased gate resistance and improved power handling capabilities. The mushroom gate structure also.
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